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Emergent Symmetry and Valley Chern Insulator in Twisted Double-Bilayer Graphene
Yimeng Wang1, G William Burg1, Biao Lian2
1Microelectronics Research Center, Department of Electrical and Computer Engineering, <a href="https://ror.org/00hj54h04">The University of Texas at Austin</a>, Austin, Texas 78758, USA.
Abstract:
Theoretical calculations show that twisted double bilayer graphene (TDBG) under a transverse electric field develops a valley Chern number 2 at charge neutrality. Using thermodynamic and thermal activation measurements we report the experimental observation of a universal closing of the charge neutrality gap in the Hofstadter spectrum of TDBG at 1/2 magnetic flux per unit cell, in agreement with theoretical predictions for a valley Chern number 2 gap. Our theoretical analysis of the experimental data shows that the interaction energy, while larger than the flat-band bandwidth in TDBG near 1° does not alter the emergent valley symmetry or the single-particle band topology.
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