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Capacitive Scheme to Detect the Topological Magnetoelectric Effect.

Chao Lei1, Perry T Mahon1, C M Canali2

  • 1Department of Physics, <a href="https://ror.org/00hj54h04">University of Texas at Austin</a>, Austin, Texas 78712, USA.

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Direct measurement of the topological magnetoelectric effect (TME) in topological insulators is proposed. This strategy addresses challenges from charge and spin disorder in real devices, paving the way for experimental verification.

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Area of Science:

  • Condensed matter physics
  • Materials science

Background:

  • The topological magnetoelectric effect (TME) is a key theoretical property of three-dimensional Z_{2} topological insulators.
  • Despite being predicted over a decade ago, the TME has not yet been directly measured experimentally.

Purpose of the Study:

  • To propose a practical strategy for the direct measurement of the TME.
  • To analyze the precision of the TME in realistic device conditions, considering charge and spin disorder.

Main Methods:

  • Theoretical proposal of a measurement strategy for TME.
  • Analysis of TME precision in the presence of charge and spin disorder.

Main Results:

  • A viable strategy for direct TME measurement is presented.
  • The study discusses the impact of disorder on the precision of the TME.

Conclusions:

  • The proposed strategy offers a pathway to experimentally validate the TME in topological insulators.
  • Understanding the influence of disorder is crucial for precise TME measurements in practical devices.