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Published on: July 24, 2015
Intrinsic and Extrinsic Photogalvanic Effects in Twisted Bilayer Graphene
Fernando Peñaranda1, Héctor Ochoa2, Fernando de Juan1,3
1<a href="https://ror.org/02e24yw40">Donostia International Physics Center</a>, Paseo Manuel de Lardizabal 4, 20018 Donostia-San Sebastian, Spain.
Abstract:
The chiral lattice structure of twisted bilayer graphene with D_{6} symmetry allows for intrinsic photogalvanic effects only at off-normal incidence, while additional extrinsic effects are known to be induced by a substrate or a gate potential. In this Letter, we first compute the intrinsic effects and show they reverse sign at the magic angle, revealing a band inversion at the Γ point. We next consider different extrinsic effects, showing how they can be used to track the strengths of the substrate coupling or electric displacement field. We also show that the approximate particle-hole symmetry implies stringent constraints on the chemical potential dependence of all photocurrents. A detailed comparison of intrinsic vs extrinsic photocurrents therefore reveals a wealth of information about the band structure and can also serve as a benchmark to constrain the symmetry breaking patterns of correlated states.
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