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Updated: May 7, 2025

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems
Published on: April 28, 2016
Unveiling anharmonic scattering in van der Waals semiconductor GaPS4 through Raman spectroscopy and theoretical
Sihan Yan1, Jingpeng Zhang1, Jia-Han Zhang2
1College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
Abstract:
The van der Waals thiophosphate GaPS4 presents additional opportunities for gallium-based semiconductors, but limited research on phonon interactions has hindered optimization on thermal properties. This research undertakes a comprehensive investigation into the anharmonic phonon scattering within GaPS4. The findings reveal pronounced anharmonic scattering, with both cubic and quartic phonon scatterings significantly influencing phonon redshift and broadening. Notably, the scattering strength is markedly higher in Raman peaks with higher wavenumbers, where quartic phonon scattering leads to conspicuous nonlinear broadening. Furthermore, a large amount of cubic and quartic scattering events is found to be Umklapp process. Besides, the molecular dynamics calculation quantitatively confirms the extensive redshift and broadening and suggests stronger anharmonic scattering beyond the Brillouin zone center. This research not only elucidates the anharmonic phonon scattering in GaPS4 but also provides theoretical foundation for further application. Concurrently, it enhances the understanding of anharmonic scattering in semiconductors within the condensed matter physics.
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