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Updated: Jun 3, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
Stacking ferroelectricity in two-dimensional van der Waals materials
Zhigang Gui1,2, Li Huang3,1
1Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, Guangdong 518045, People's Republic of China.
Abstract:
Miniaturization of ferroelectrics for technological applications has proven challenging due to the suppression of electric polarization caused by increasing depolarization fields as material thickness decreases. The emergence of ferroelectricity in two-dimensional (2D) van der Waals (vdW) materials offers a potential solution to this challenge, prompting significant research efforts over the past decade. While intrinsic 2D vdW ferroelectrics are scarce, polar stacking provides a more general approach to introducing ferroelectricity in these materials. This review revisits the fundamental concept of stacking ferroelectricity, complemented by symmetry analysis for constructing polar stackings, and both classical and quantum perspectives on the origin of stacking ferroelectrics. We present key advances in polarization dynamics and briefly summarize various physical phenomena directly coupled to stacking ferroelectricity, including multiferroic, magnetoelectric, and valleytronic effects, along with their related applications. Finally, we discuss future challenges and potential developments in the field of 2D stacking ferroelectricity.
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