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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Fast barrier-free switching in synthetic antiferromagnets
Yu Dzhezherya1,2,3, V Kalita1,2,3, P Polynchuk1,4
1Institute of Magnetism, NASU and MESU, Kyiv, 03142, Ukraine.
Abstract:
We analytically solve the Landau-Lifshitz equations for the collective magnetization dynamics in a synthetic antiferromagnet (SAF) nanoparticle and uncover a regime of barrier-free switching under a short small-amplitude magnetic field pulse applied perpendicular to the SAF plane. We give examples of specific implementations for forming such low-power and ultra-fast switching pulses. For fully optical, resonant, barrier-free SAF switching we estimate the power per write operation to be pJ, 10-100 times smaller than for conventional quasi-static rotation, which should be attractive for memory applications.
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