Related Experiment Video
Updated: Jun 3, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Terahertz Saturable Absorption across Charge Separation in Photoexcited Monolayer Graphene/MoS2 Heterostructure
Qi Xi1,2, Jin Yang3, Jiafeng Xie4
1Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China.
Abstract:
Unveiling the nonlinear interactions between terahertz (THz) electromagnetic waves and free carriers in two-dimensional materials is crucial for the development of high-field and high-frequency electronic devices. Herein, we investigate THz nonlinear transport dynamics in a monolayer graphene/MoS2 heterostructure using time-resolved THz spectroscopy with intense THz pulses as the probe. Following ultrafast photoexcitation, the interfacial charge transfer establishes a nonequilibrium carrier redistribution, leaving free holes in the graphene and trapping electrons in the MoS2. When probed with intense THz pulses exceeding 34 kV/cm in a peak electric field, significant THz saturable absorption is observed over a period of 20 ps. Furthermore, the photoinduced change in the transmitted THz waveform, linked to the THz-driven nonlinear current, manifests as a substantial self-phase modulation. These nonlinear responses can be attributed to the competition between rapid carrier heating and slow carrier cooling via electron-electron and electron-phonon scattering in the charge-transfer-induced hole system of the graphene layer. This work demonstrates an integration of advantages arising from robust nonlinear absorption in graphene and enhanced photocarrier harvesting in transition metal dichalcogenides by exploiting heterostructure construction.
More Related Videos
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Molecular Spectroscopy: Absorption and Emission

