Vertical Quantum Confinement in Bulk MoS2
Jairo Obando-Guevara1,2, Álvaro González-García1, Marcin Rosmus3
1Dto. de Física de Materiales, Universidad Complutense de Madrid, 28040 Madrid, Spain.
Abstract:
We experimentally observe quantum confinement states in bulk MoS2 by using angle-resolved photoemission spectroscopy (ARPES). The band structure at the Γ̅ point reveals quantum well states (QWSs) linked to vertical quantum confinement of the electrons, confirmed by the absence of dispersion in k and a strong intensity modulation with the photon energy. Notably, the binding energy dependence of the QWSs versus n does not follow the quadratic dependence of a two-dimensional electron gas. Instead, a linear behavior is observed that is consistent with a parabolic-like quantum well. This confinement arises from the mechanical exfoliation preparation method, which leads to the detachment of a multilayer stack from the underlying bulk. This is confirmed by density functional theory (DFT) calculations. The quantum confinement in bulk-like MoS2 not only offers the opportunity to explore intersubband transitions to exploit optical properties but also provides a means to study fundamental quantum phenomena in multilayer stacks of different thicknesses.
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Hybridization of Atomic Orbitals I
VSEPR Theory and the Basic Shapes


