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Updated: Jun 3, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Electronic confinement induced quantum dot behavior in magic-angle twisted bilayer graphene
Bhaskar Ghawri1, Pablo Bastante2, Kenji Watanabe3
1Transport at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland. michel.calame@empa.ch.
Abstract:
Magic-angle twisted bilayer graphene (TBLG) has emerged as a versatile platform to explore correlated electron phases driven primarily by low-energy flat bands in moiré superlattices. While techniques for controlling the twist angle between graphene layers have spurred rapid experimental progress, understanding the effects of doping inhomogeneity on electronic transport in correlated electron systems remains challenging. In this work, we investigate the interplay of confinement and doping inhomogeneity on the electrical transport properties of TBLG by leveraging device dimensions and twist angles. We show that reducing device dimensions can magnify disorder potentials caused by doping inhomogeneity, resulting in pronounced carrier confinement. This phenomenon is evident in charge transport measurements, where the Coulomb blockade effect is observed. Temperature-dependent measurements reveal a large variation in the activation gap across the device. These findings highlight the critical role of doping inhomogeneity in TBLG and its significant impact on the transport properties of the system.
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