Mixed Pt-Ni Halide Perovskites for Photovoltaic Application

Cs₂PtI₆ is a promising photoabsorber with a direct bandgap of 1.4 eV and a high carrier lifetime; however, the cost of Pt inhibits its commercial viability. Here, we performed a cost analysis and experimentally explored the effect of replacing Pt with earth-abundant Ni in solution-processed Cs(Pt_xNi_1-x)(I,Cl)₃ thin films on the properties and stability of the perovskite material. Films fabricated with CsI and PtI₂ precursors result in a perovskite phase with a bandgap of 2.13 eV which transitions into stable Cs₂PtI₆ with a bandgap of 1.6 eV upon annealing. The complete substitution of PtI₂ in films with CsI + NiCl₂ precursors results in a wider bandgap of 2.35 eV and SEM shows two phases-a rod-like structure identified as CsNi(I,Cl)₃ and residual white particles of CsI, also confirmed by XRD and Raman spectra. Upon extended thermal annealing, the bandgap reduces to 1.65 eV and transforms to CsNiCl₃ with a peak shift to higher 2-theta. The partial substitution of PtI₂ with NiCl₂ in mixed 50-50 Pt-Ni-based films produces a bandgap of 1.9 eV, exhibiting a phase of Cs(Pt,Ni)(I,Cl)₃ composition. A similar bandgap of 1.85 eV and the same diffraction pattern with improved crystallinity is observed after 100 h of annealing, confirming the formation of a stable mixed Pt-Ni phase.