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An Improved Algorithm to Extract Moiré Fringe Phase for Wafer-Mask Alignment in Nanoimprint Lithography.

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This study introduces an advanced Moiré fringe phase extraction algorithm for nanoimprint lithography wafer-mask alignment. The new method enhances alignment accuracy to the nanometer level, outperforming existing techniques.

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Area of Science:

  • Nanotechnology
  • Metrology
  • Optical Engineering

Background:

  • Accurate wafer-mask alignment is critical for nanoimprint lithography.
  • Existing methods like 2D-FFT and 2D-WFF have limitations in speed and accuracy.
  • Moiré fringe analysis is a key technique for precise alignment measurements.

Purpose of the Study:

  • To develop an improved phase extraction algorithm for Moiré fringes.
  • To enhance wafer-mask alignment accuracy in nanoimprint lithography.
  • To overcome limitations of existing 2D-FFT and 2D-WFF methods.

Main Methods:

  • Combines 2D-FFT and 2D-WFF for efficient fundamental frequency extraction.
  • Utilizes local spectrum thresholding to eliminate noise.
  • Employs a Gaussian window to suppress spectral leakage and avoid parameter tuning.

Main Results:

  • Achieved nanometer-level alignment accuracy.
  • Demonstrated a 15.8% improvement over 2D-FFT.
  • Showed a 6.6% improvement over 2D-WFF.
  • Validated through simulations and experimental results.

Conclusions:

  • The proposed algorithm offers superior accuracy and efficiency for wafer-mask alignment.
  • It effectively addresses noise and spectral leakage issues.
  • The method is feasible and rational for nanoimprint lithography applications.