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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Bipolar Junction Transistor

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...

Induced Electric Dipoles

Induced Electric Dipoles

A permanent electric dipole orients itself along an external electric field. This rotation can be quantified by defining the potential energy because the external torque does work in rotating it. Then, the potential energy is minimum at the parallel configuration and maximum at the antiparallel configuration. While the former is a stable equilibrium, the latter is an unstable equilibrium.
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...

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Related Experiment Video

Updated: Jun 3, 2025

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Exciton-polariton ring Josephson junction.

Nina Voronova^1,2, Anna Grudinina^1,2, Riccardo Panico^3,4

¹National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, 115409, Moscow, Russia.

Nature Communications

|January 8, 2025

Summary

This summary is machine-generated.

Researchers created a Josephson junction in an exciton-polariton condensate ring. This demonstrates superfluidity and Josephson effects, paving the way for optical integrated circuits.

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Area of Science:

Quantum physics
Condensed matter physics
Optoelectronics

Background:

Macroscopic quantum coherence enables interference effects and applications like Josephson junctions.
The Josephson effect is observed in various quantum fluids, including superfluids and Bose-Einstein condensates.
Implementing Josephson junctions in exciton-polariton condensates has been challenging.

Purpose of the Study:

To realize a Josephson junction in a polariton ring condensate.
To demonstrate control over circulation and study superfluid-hydrodynamic and Josephson regimes.
To explore the potential for integrated optical circuits and room-temperature applications.

Main Methods:

Fabrication of a Josephson junction in a polariton ring condensate.
Optical control of the barrier to induce circulation.
Characterization of superfluid-hydrodynamic and Josephson regimes.

Main Results:

Successful realization of a Josephson junction in a polariton ring condensate.
Demonstration of net circulation induced by optical control.
Observation of both superfluid-hydrodynamic and Josephson regimes, with the latter characterized by sinusoidal tunneling current.

Conclusions:

The study successfully demonstrates weak links in ring condensates, crucial for optical integrated circuits.
The findings highlight the potential of exciton-polariton condensates for room-temperature applications.
Theoretical models based on free-energy landscapes explain the observed phenomena.