Improved dielectric performance of graphene oxide reinforced plasticized starch

High dielectric constants with less dielectric loss composites is highly demandable for technological advancements across various fields, including energy storage, sensing, and telecommunications. Their significance lies in their ability to enhance the performance and efficiency of a wide range of devices and systems. In this work, the dielectric performance of graphene oxide (GO) reinforced plasticized starch (PS) nanocomposites (PS/GO) for different concentrations of GO nanofiller was studied. The surface morphology, and chemical and structural properties of the PS/GO nanocomposites were investigated by field emission scanning electron microscopy (FESEM), Fourier-transform infrared spectrometry (FTIR), and X-ray diffractometer (XRD). The FESEM study showed a uniform dispersion of the GO nanofiller in the nanocomposites. The XRD analysis showed a reduction in d-space due to the incorporation of GO nanofiller in the nanocomposites. The FTIR data exhibits the formation of hydrogen bonds among PS and GO nanofillers, suggesting the presence of strong interaction between them. The dielectric properties of the nanocomposites were studied at room temperature in the frequency range 100 Hz‒1 MHz. The dielectric constant was found to improve due to the incorporation of GO. This composite nanomaterial also provides low dielectric loss at low frequency. Moreover, an increasing trend is observed for the AC conductivity of the composites. From the complex impedance study, the changes in various impedances with low to high-frequency ranges have been calculated and explained in the equivalent circuit diagram. The complex impedance spectra analysis shows the change in resistance and constant phase element (CPE): grain boundary resistance, R2 decreases from 4.3 KΩ to 1.9 KΩ, and CPE increases from 0.59 μF to 0.72 μF for PS/GO (0.5%) nanocomposite. This study will provide a potential route for the fabrication of biocompatible dielectric device fabrication.