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Related Experiment Video

Updated: Jun 3, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Ferroelectric Optical Memristors Enabled by Non-Volatile Electro-Optic Effect.

Yiyang Wen¹, Yilin Cao², Hongda Ren¹

¹Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin, 300350, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)

|January 8, 2025

Summary

Researchers developed a novel optical memristor using ferroelectric materials for advanced photonic circuits. This device enables non-volatile optical phase modulation, paving the way for efficient, high-bandwidth computing applications.

Keywords:

electro‐optic ferroelectrics nonlinear optics non‐volatile optical memristors

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Published on: May 13, 2020

Area of Science:

Photonics and Materials Science
Non-volatile memory and neuromorphic computing

Background:

Optical memristors are crucial for programmable photonic integrated circuits, offering high bandwidth and low power consumption.
Existing optical memristors face challenges in achieving non-volatile operation and precise optical phase control.

Purpose of the Study:

To propose and demonstrate a novel non-volatile optical memristor based on the electro-optic (EO) effect.
To achieve optical phase modulation without compromising optical transparency.
To enable deterministic, non-volatile, multilevel optical states for photonic applications.

Main Methods:

Utilizing a ferroelectric material, lead magnesium niobate-lead titanate (PMN-PT), with controlled domain alignment.
Designing an optical memristor specifically for modulating optical phase.
Developing a non-volatile tunable waveplate for free-space optics.

Main Results:

Demonstrated a non-volatile EO memristor enabling optical phase shifts from 0 to π/2.
Achieved deterministic and repeatable non-volatile multilevel EO states.
Reported a state switching rate below 100 ms, energy consumption of 234 nJ, and state retention up to 12 hours.

Conclusions:

Successfully realized a non-volatile optical memristor based solely on optical phase modulation.
The proposed device offers significant opportunities for developing new ferroelectric memristors.
This advancement is key for next-generation programmable photonic integrated circuits.