Related Experiment Video
Updated: Jun 3, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Modulation on Transconductance and Switching Speed of Vertical Organic Electrochemical Transistors via Structure
Sihui Hou1, Wei Zuo1, Qizhou Fang1
1School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
Abstract:
Vertical organic electrochemical transistors (vOECTs) have received widespread attention in bioelectronics, wearable, and neuromorphic electronics due to their high transconductance (gm), low driving voltage, and biocompatibility. As key parameters of vOECTs, gm and switching speed (or transient time, τ) are vital for achieving satisfying performance in various practical applications. Here we employ vOECTs with varying top electrode widths for effective gm and switching speed modulation. It is found that both gm and τ increase linearly (from 60.0 to 105.8 mS and from 1.15 to 1.60 ms, respectively) with the increasing top electrode width (from 40 to 120 μm). This result indicates that it is challenging to simultaneously obtain both high gm and short τ. Consequently, grid-like top electrodes are employed, which are composed of small electrodes arranged with certain intervals, where ions can be injected from the gap of electrodes instead of the side of a single large electrode, leading to both high gm (202 mS) and short τ (0.797 ms). In addition, the grid-like electrode-based vOECTs successfully achieve electrocardiogram (ECG) and electrooculogram (EOG) monitoring with high signal quality. This work provides an ingenious design of the top electrodes in vOECTs and promotes further optimization of device performance, increasing gm while enabling high-frequency operation.
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Field Effect Transistor
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...

