Ultraelastic Lead Halide Perovskite Films via Direct Laser Patterning

The precise patterning of elastic semiconductors holds encouraging prospects for unlocking functionalities and broadening the scope of optoelectronic applications. Here, perovskite films with notable elasticity capable of stretching over 250% are successfully fabricated by using a continuous-wave (CW) laser-patterning technique. Under CW laser irradiation, perovskite nanoparticles (NPs) undergo meticulous crystallization within the thermoplastic polyurethane (TPU) matrix, which yields the capability of an unparalleled stretch behavior. Furthermore, the strategic integration of β-phase poly(vinylidene fluoride) (β-PVDF) introduces a highly ordered dipolar framework, augmenting the crystallization dynamics of perovskite NPs during the laser-patterning process, thereby elevating the patterning efficiency and film quality. Furthermore, full-spectrum visible perovskite films that possess high transparency, high resolution, and adequate stability are achieved through the precise tuning of halide components, thereby emphasizing the impressive versatility of the high-elasticity printing technique. Our findings are meaningful for the direct patterning of high-precision, highly elastic semiconductors, finding a way for advancements in stretchable photonic and optoelectronic devices.