Towards a long-term stable MAPbBr3 single crystal-based photoconductor with a high on/off ratio and detectivity
Vishnu Anilkumar1, Apurba Mahapatra1, Joanna Kruszyńska1
1Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland. dprochowicz@ichf.edu.pl.
Summary
We developed a stable perovskite photodetector using lead sulfate passivation. This enhanced device shows improved performance and maintains high detectivity and on/off ratios for over a year.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- Lead halide perovskite photodetectors offer high performance but suffer from poor operational stability.
- Surface defects and recombination pathways limit the stability and performance of perovskite-based optoelectronic devices.
Purpose of the Study:
- To enhance the stability and performance of methylammonium lead bromide (MAPbBr3) single-crystal photodetectors.
- To investigate the effect of ultrathin lead sulfate (PbSO4) passivation on photodetector characteristics.
Main Methods:
- Fabrication of photodetectors using MAPbBr3 single crystals.
- Passivation of MAPbBr3 surfaces with an ultrathin PbSO4 layer.
- Characterization of device performance, including detectivity and on/off ratios, before and after prolonged operational testing.
Main Results:
- The PbSO4-passivated photodetector exhibited superior detectivity and on/off ratios compared to the control device.
- Passivation effectively reduced surface trap states and suppressed charge carrier recombination.
- The passivated device retained approximately 56% of its initial detectivity (D*) and an on/off ratio of ~801 after one year, significantly outperforming the control device (~22% D* and ~6 on/off ratio).
Conclusions:
- Ultrathin PbSO4 passivation is a highly effective strategy for enhancing the stability and performance of MAPbBr3 single-crystal photodetectors.
- The improved performance is attributed to reduced surface recombination and lower dark current.
- This approach offers a promising pathway for developing robust and reliable perovskite-based optoelectronic devices.


