Jove
Visualize
Contact Us

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

291
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
291
Semiconductors01:22

Semiconductors

576
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
576

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same authorSame journal

Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout.

Npj nanophotonics·2026
Same author

Engineering Nanodiamonds for Quantum Sensing: Material Constraints at the Nanoscale.

ACS nano·2026
Same author

Phase-engineered distributed grating reliefs for high-power single-mode 795-nm VCSELs with on-axis emission.

Optics letters·2026
Same author

Modulation of Single-Molecule Emission at Hexagonal Boron Nitride Surfaces.

Nano letters·2026
Same author

Erratum: The DREAM Implant: A Lightweight, Modular, and Cost-Effective Implant System for Chronic Electrophysiology in Head-Fixed and Freely Behaving Mice.

Journal of visualized experiments : JoVE·2026
Same author

SUPER and femtosecond spin-conserving coherent excitation of a tin-vacancy color center in diamond.

Nature communications·2026
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Jun 3, 2025

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.4K

AlGaN/AlN heterostructures: an emerging platform for integrated photonics.

Sinan Gündoğdu1,2, Sofia Pazzagli1, Tommaso Pregnolato1,2

  • 1Department of Physics, Humboldt-Universität zu Berlin, Berlin, Germany.

Npj Nanophotonics
|January 10, 2025
PubMed
Summary
This summary is machine-generated.

We developed a new aluminum gallium nitride (AlGaN) on aluminum nitride (AlN) platform for integrated photonics. This novel material enables reconfigurable on-chip nonlinear optical devices for quantum applications.

Keywords:
Integrated opticsMaterials for opticsMaterials scienceOptics and photonics

More Related Videos

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

8.0K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K

Related Experiment Videos

Last Updated: Jun 3, 2025

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.4K
Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

8.0K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K

Area of Science:

  • Materials Science
  • Photonics
  • Quantum Optics

Background:

  • Integrated photonics requires advanced materials for complex functionalities.
  • Aluminum Gallium Nitride (AlGaN) offers a promising combination of electro-optic properties and low optical loss.
  • Existing platforms may lack the versatility for reconfigurable and quantum optical devices.

Purpose of the Study:

  • To introduce and characterize AlGaN on AlN as a novel platform for integrated photonics.
  • To demonstrate the fabrication of essential photonic components on this platform.
  • To enable on-chip nonlinear optical devices for quantum information processing and classical light manipulation.

Main Methods:

  • Design and epitaxial growth of AlGaN/AlN heterostructures.
  • Fabrication of integrated photonic components including edge couplers, waveguides, directional couplers, and ring resonators.
  • Characterization of material properties and device performance for nonlinear and electro-optic applications.

Main Results:

  • Successful integration of multiple photonic components on the AlGaN/AlN platform.
  • Demonstration of low-loss waveguides and tunable ring resonators with high quality factors.
  • AlGaN/AlN platform exhibits suitability for broad spectral range applications (UVC to LWIR).

Conclusions:

  • The AlGaN/AlN platform is a viable solution for advanced integrated photonics.
  • This platform supports the development of reconfigurable nonlinear optical devices.
  • Enables future applications in photon-pair generation, quantum frequency conversion, and high-speed optical switching.