Building Bilayer MoS2 with Versatile Morphologies via Etching-And-Growth Coexisting Method.

Yibiao Feng1, Zihan Zhao2, Tiantian Zhang1

  • 1Key Laboratory of Multiscale Spin Physics, Ministry of Education, School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China.

Summary

This study introduces an etching-and-growth method to create high-quality molybdenum disulfide (MoS2) bilayers with controlled shapes via chemical vapor deposition (CVD). This technique enhances the performance of 2D materials in electronic and optoelectronic devices.

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