Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Search research articles

Related Experiment Video

Updated: Jun 3, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

Building Bilayer MoS₂ with Versatile Morphologies via Etching-And-Growth Coexisting Method.

Yibiao Feng¹, Zihan Zhao², Tiantian Zhang¹

¹Key Laboratory of Multiscale Spin Physics, Ministry of Education, School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China.

Small (Weinheim an Der Bergstrasse, Germany)

|January 10, 2025

Summary

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Tranilast ameliorates experimental abdominal aortic aneurysm by inhibiting the NLRP3 inflammasome pathway.

Journal of pharmaceutical analysis·2026

Same author

Conformal and adhesive gel for stable electrophysiology on hairy animals without shaving.

Nature communications·2026

Same author

Ultraconformal Carbon-Based Biointerfacing Electrodes for Cognition Study.

Accounts of chemical research·2026

Same author

Bioaccumulation of halogenated organic pollutants (HOPs) in insects from the North China Plain.

Environmental research·2026

Same author

Ultra-Large-Period Moiré Lattices in Twisted Trilayer MoS<sub>2</sub> Induced by High-Symmetry Sites.

Advanced materials (Deerfield Beach, Fla.)·2026

Same author

Graphene-Skinned Al<sub>2</sub>O<sub>3</sub> Enables High Thermal Conductivity Phase Change Composites for Thermal Management.

Small (Weinheim an der Bergstrasse, Germany)·2025

This study introduces an etching-and-growth method to create high-quality molybdenum disulfide (MoS₂) bilayers with controlled shapes via chemical vapor deposition (CVD). This technique enhances the performance of 2D materials in electronic and optoelectronic devices.

Area of Science:

Materials Science
Nanotechnology
Surface Chemistry

Background:

Etch-engineering offers a way to control the properties of 2D layered materials during chemical vapor deposition (CVD).
There is a need for improved methods to fabricate high-quality transition metal dichalcogenide (TMD) materials with tunable layers and morphologies for advanced electronic and optoelectronic applications.

Purpose of the Study:

To develop a novel method for synthesizing high-quality, high-symmetric molybdenum disulfide (MoS₂) bilayers with controlled morphologies using CVD.
To elucidate the growth mechanism of MoS₂ bilayers under etching and growth conditions.

Main Methods:

An etching-and-growth coexistence method was employed for the direct synthesis of MoS₂ bilayers.
The growth mechanism was investigated by analyzing carrier Argon (Ar) perturbation and precursor concentration variations, identifying four distinct growth stages.

Keywords:

MoS2 bilayer chemical vapor deposition (CVD)etching growth mechanism precursor concentration gradient

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

Related Experiment Videos

Last Updated: Jun 3, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

Main Results:

High-quality, high-symmetric polygonal bilayer MoS₂ with versatile morphologies was successfully synthesized.
The formation of single-crystal bilayer MoS₂ was achieved, minimizing multigrain generation and ensuring uniformity.
A detailed understanding of the growth mechanism, including four stages from growth-priority to etching-priority, was established.

Conclusions:

The developed etching-and-growth method provides a controllable protocol for engineering the morphology and shape of MoS₂ bilayers.
This approach enriches the understanding of direct TMD material fabrication and offers a pathway to enhance their performance in electronic and optoelectronic devices.