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Photoelectric Effect02:26

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When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
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MoTe2 Photodetector for Integrated Lithium Niobate Photonics.

Qiaonan Dong1,2,3, Xinxing Sun3, Lang Gao1,3

  • 1State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China.

Nanomaterials (Basel, Switzerland)
|January 10, 2025
PubMed
Summary

We developed an efficient on-chip photodetector using Molybdenum Ditelluride (MoTe2) integrated with lithium niobate photonics. This device achieves high responsivity and low dark current for telecommunication wavelengths.

Keywords:
MoTe2lithium niobate photonicsmicroresonatoron-chip photodetectorsphotolithography-assisted chemical–mechanical etching

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Area of Science:

  • Photonics and Materials Science
  • Integrated Optics
  • Optoelectronics

Background:

  • Scalable integrated lithium niobate photonics requires efficient on-chip photodetectors for optical-to-electrical signal conversion.
  • Two-dimensional materials offer promising high-efficiency detection capabilities for integrated photonic circuits.

Purpose of the Study:

  • To demonstrate an efficient on-chip photodetector utilizing few-layer Molybdenum Ditelluride (MoTe2) integrated with a thin-film lithium niobate waveguide.
  • To integrate this photodetector with a microresonator for operation in the optical telecommunication band.
  • To evaluate the performance characteristics of the integrated photodetector.

Main Methods:

  • Fabrication of lithium niobate-on-insulator waveguides and micro-ring resonators using femtosecond laser photolithography-assisted chemical-mechanical etching.
  • Integration of few-layer MoTe2 onto the lithium niobate waveguide.
  • Characterization of optical absorption, transmission loss, responsivity, dark current, and photo-dark current ratio at 1550 nm.

Main Results:

  • The lithium niobate waveguide-integrated MoTe2 exhibited a high absorption coefficient of 72% and a low transmission loss of 0.27 dB µm⁻¹.
  • The on-chip photodetector achieved a responsivity of 1 mA W⁻¹ at 20 V bias, with a low dark current of 1.6 nA and a photo-dark current ratio of 10⁸ W⁻¹.
  • Photocurrent was approximately 160 times higher compared to free-space irradiation due to effective waveguide coupling.

Conclusions:

  • An efficient on-chip photodetector based on MoTe2 integrated with lithium niobate photonics was successfully demonstrated.
  • The device exhibits excellent performance metrics, including high responsivity and low dark current.
  • Integration with a micro-ring resonator (Q factor of 10⁴) enables wavelength-selective detection, paving the way for applications in on-chip spectrometers and biosensors.