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Thermal Optimization of Edge-Emitting Lasers Arrays.

Robert P Sarzała¹, Dominika Dąbrówka¹, Maciej Dems¹

¹Institute of Physics, Lodz University of Technology, ul. Wólczańska 217/221, 90-003 Łódź, Poland.

Materials (Basel, Switzerland)

|January 11, 2025

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This study optimizes gallium nitride laser arrays for even temperature distribution by adjusting emitter placement and contact size. This novel thermal management approach avoids complex cooling systems for improved performance.

Area of Science:

Optoelectronics
Materials Science
Thermal Engineering

Background:

Gallium nitride (GaN) edge-emitting lasers are crucial for green light emission.
Uneven temperature distribution in laser arrays leads to performance degradation.
Existing cooling solutions for laser arrays can be complex and costly.

Purpose of the Study:

To develop a novel thermal optimization method for one-dimensional (1D) laser arrays.
To address uneven temperature distribution in GaN edge-emitting lasers.
To enhance laser array performance without complex cooling systems.

Main Methods:

Heat flow numerical analysis was employed to study temperature distribution.
A specialized optimization method was developed for 1D laser arrays.

Keywords:

GaN computer simulation nitride edge-emitting laser arrays thermal optimization

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Emitter placement and top gold contact size were key parameters investigated.

Main Results:

Achieved even temperature distribution in a 1D GaN edge-emitting laser array (540 nm).
Demonstrated that emitter placement and contact size optimization is effective.
Showcased that overall device dimensions do not need alteration for thermal optimization.

Conclusions:

The proposed thermal optimization method ensures uniform temperature across laser arrays.
This approach eliminates the need for complex and expensive cooling systems.
The optimization technique is applicable to various material systems, including nitrides, arsenides, and phosphides.