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Published on: March 24, 2019
In-Plane Anisotropy in van der Waals NiTeSe Ternary Alloy
Nguyen Huu Lam1, Tae Gyu Rhee2,3,4, Seongmun Kim5
1Department of Physics, University of Ulsan, Ulsan, 44610, Republic of Korea.
Ternary transition metal dichalcogenides like NiTeSe exhibit tunable anisotropic properties. This study reveals how Se substitution in NiTe2 induces in-plane anisotropy, impacting electronic behavior for advanced devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Anisotropic material properties are crucial for diverse electronic, magnetic, optical, and mechanical applications.
- Ni-based van der Waals materials, such as NiTe2, are of interest due to their unique characteristics.
Purpose of the Study:
- To investigate the anisotropic properties of NiTe2 and the NiTeSe alloy.
- To understand how selenium substitution influences the in-plane anisotropy of NiTe2.
Main Methods:
- Utilized scanning tunneling microscopy (STM) for real-space imaging.
- Employed angle-resolved photoemission spectroscopy (ARPES) for electronic structure analysis.
- Performed density functional theory (DFT) calculations for theoretical validation.
Main Results:
- NiTeSe exhibits pronounced in-plane anisotropy, unlike the trigonal symmetry of 1T-NiTe2.
- STM revealed linear charge distribution order in NiTeSe.
- ARPES and DFT showed an anisotropic Fermi surface elongated along the ky direction.
- Fermi velocity varied directionally, being highest along kx and lowest along ky.
Conclusions:
- Selenium substitution effectively induces and tunes in-plane anisotropy in Ni-based van der Waals materials.
- The observed anisotropy offers potential for developing novel anisotropic electronic and optoelectronic devices.
- Findings highlight the tunability of properties in ternary transition metal dichalcogenide systems.
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