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Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis

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Published on: January 6, 2016

Intervalence plasmons in boron-doped diamond.

Souvik Bhattacharya¹, Jonathan Boyd², Sven Reichardt³

¹Department of Nuclear, Plasma, and Radiological Engineering, The Grainger College of Engineering, University of Illinois Urbana-Champaign, Champaign, IL, USA.

Nature Communications

|January 14, 2025

Summary

This summary is machine-generated.

Boron-doped diamond exhibits intervalence plasmons, which are collective electronic excitations. This discovery reveals a new way to achieve metallic properties in semiconductors like diamond for quantum technologies.

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Area of Science:

Solid State Physics
Materials Science
Quantum Information Science

Background:

Doped semiconductors can display metallic properties, including superconductivity and plasmon resonances.
Diamond, a wide-bandgap semiconductor, becomes electronically active when doped with boron.
The electronic band structure of boron-doped diamond is understood, but the link between charge carriers and plasmons remains unexplored.

Purpose of the Study:

To investigate and report the existence of intervalence plasmons in boron-doped diamond.
To establish a connection between charge carriers and plasmonic behavior in this material.
To explore the potential of boron-doped diamond for applications in quantum information technologies.

Main Methods:

Valence electron energy loss spectroscopy (VEELS) was employed to detect low-energy electronic excitations.
Near-field infrared spectroscopy was utilized to provide further evidence for these excitations.
First-principles calculations were performed to model the dielectric function and validate experimental findings.

Main Results:

Intervalence plasmons, defined as collective electronic excitations between valence subbands, were observed in boron-doped diamond.
Experimental evidence was corroborated by theoretical calculations, confirming the presence of these low-energy plasmons.
Calculations indicated a dielectric function crossover, characteristic of metallic behavior, in the doped diamond.

Conclusions:

A novel mechanism for inducing plasmon-like behavior in doped semiconductors has been identified.
Boron-doped diamond exhibits intervalence plasmons, demonstrating a pathway to metallic properties in this material.
These findings open possibilities for utilizing diamond's unique properties in advanced quantum information technologies.