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Phosphoinositides and PIPs

Phosphoinositides and PIPs

Phosphoinositides are a group of phospholipids containing a glycerol backbone with two fatty acid chains and a phosphate attached to a myoinositol sugar ring. The inositol head group extends into the cytoplasm, where it is modified by adding phosphate groups to form phosphatidylinositol phosphates or PIPs.
Different phosphoinositides are synthesized and recruited on the cytosolic face of the plasma membrane. The localization of specific phosphoinositides concentrated in separate membrane...

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Related Experiment Video

Updated: Jun 2, 2025

Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots

Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots

Published on: May 7, 2019

Phosphorus Oxidation Controls Epitaxial Shell Growth in InP/ZnSe Quantum Dots.

Reinout F Ubbink¹, Tom Speelman², Daniel Arenas Esteban¹

¹Optoelectronic Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands.

|January 15, 2025

Summary

This summary is machine-generated.

Investigating indium phosphide/zinc selenide (InP/ZnSe) quantum dots reveals that interface oxidation creates a phosphate layer, hindering shell growth and impacting visible light emission properties.

Keywords:

indium phosphide interface oxidation photoluminescence quantum dots solid state NMR zinc selenide

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Published on: May 31, 2018

Area of Science:

Materials Science
Nanotechnology
Quantum Dot Research

Background:

Indium phosphide/zinc selenide/zinc sulfide (InP/ZnSe/ZnS) core/shell/shell quantum dots are key for visible light emission applications.
The InP/ZnSe interface presents challenges due to charge imbalance and InP oxidation, with debated effects of defects.

Purpose of the Study:

To elucidate the atomic-level structure of the InP/ZnSe interface.
To understand the role of oxidation and defects on quantum dot properties.

Main Methods:

Utilized solid-state nuclear magnetic resonance (ssNMR) spectroscopy (³¹P, ⁷⁷Se, ¹⁷O).
Employed high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM).

Main Results:

Observed distinct changes in Se NMR spectra and crystal orientation upon intentional oxidation.
Identified high levels of interface oxidation leading to an amorphous phosphate layer.
Demonstrated that this phosphate layer inhibits the epitaxial growth of the ZnSe shell.

Conclusions:

Interface oxidation significantly alters the InP/ZnSe quantum dot structure.
Amorphous phosphate layer formation due to oxidation is detrimental to shell epitaxy and quantum dot performance.