Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

286
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
286
Semiconductors01:22

Semiconductors

569
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
569
The Hall Effect01:30

The Hall Effect

2.2K
Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
2.2K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

282
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
282
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

207
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
207

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Chronic refractory ulcer caused by Edwardsiella tarda: a case report and literature review.

BMC infectious diseases·2026
Same author

False-positive beta-glucan test due to beta-glucan component in sterile gauze during treatment of fungal sepsis: a case report.

Frontiers in surgery·2026
Same author

Lacticaseibacillus casei Zhang modulates iron homeostasis in iron-overloaded mice via an IL-22-dependent pathways.

NPJ science of food·2026
Same author

Lotus leaf-inspired silk fibroin/sericin biomimetic active packaging films: Preparation, characterization, and application in extending shelf-life of pork and shrimp.

International journal of biological macromolecules·2026
Same author

Correlated quantum shift vector of particle-hole excitations.

Nature communications·2026
Same author

Associations of Place-based Social Determinants of Health with Biomarkers of Alzheimer's Disease and Related Dementias.

Alzheimer's & dementia. Behavior & socioeconomics of aging·2026
Same journal

Higher-Order Clustering of Receptors Real-Time Projected by Plasmon-ruler on the Single Live Cell.

Nano letters·2026
Same journal

Achieving Fermi-Level Depinning and Ideal Metal Contact in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Devices via MXene Integration.

Nano letters·2026
Same journal

AI-Assisted Electron Microscopy in Structure-Performance Analysis of Advanced Catalysts: From Atomic Resolution to Statistical Significance.

Nano letters·2026
Same journal

Electrically Switchable Ultraslow Dispersionless Polaritons via Twist Engineering in van der Waals Heterostructures.

Nano letters·2026
Same journal

Correction to "Ultrasonication-Triggered Ubiquitous Assembly of Magnetic Janus Amphiphilic Nanoparticles in Cancer Theranostic Applications".

Nano letters·2026
Same journal

Tunable Proximity Valley Splitting Via Interfacial Exchange Pinning in WSe<sub>2</sub>-CrBr<sub>3</sub>-CrPS<sub>4</sub> Heterostructures.

Nano letters·2026
See all related articles

Related Experiment Video

Updated: Jun 2, 2025

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
10:36

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

10.5K

Metallic Electro-optic Effect in Gapped Bilayer Graphene.

Da Ma1, Ying Xiong1, Justin C W Song1

  • 1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371.

Nano Letters
|January 15, 2025
PubMed
Summary
This summary is machine-generated.

Researchers demonstrate simpler metallic electro-optic (EO) modulation in gapped bilayer graphene. This approach avoids complex materials and Berry curvature dipoles, enabling efficient terahertz EO modulators.

Keywords:
electro-optic effectgrapheneskew scatteringterahertz

More Related Videos

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K

Related Experiment Videos

Last Updated: Jun 2, 2025

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
10:36

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

10.5K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K

Area of Science:

  • Photonics and Materials Science
  • Condensed Matter Physics

Background:

  • Electro-optic (EO) modulation is crucial for photonic devices.
  • Non-Drude dynamics from Berry curvature dipole (BCD) are explored for terahertz (THz) EO modulation.
  • BCD-induced effects typically require complex materials like strained twisted bilayer graphene.

Purpose of the Study:

  • To investigate simpler materials for metallic EO modulation in the terahertz range.
  • To explore alternative mechanisms beyond BCD for achieving significant EO effects.

Main Methods:

  • Theoretical analysis of gapped bilayer graphene.
  • Identification of skew-scattering and 'snap' (third-order velocity derivative) as key mechanisms.
  • Investigation of Pockels and Kerr effects in clean metals.

Main Results:

  • Gapped bilayer graphene offers terahertz EO coefficients comparable to complex flat-band materials.
  • Significant EO effects are achieved without relying on a Berry curvature dipole.
  • Skew-scattering and 'snap' effects drive pronounced Pockels and Kerr EO phenomena.

Conclusions:

  • Metallic EO modulation is feasible in simpler materials like gapped bilayer graphene.
  • This simplified approach facilitates the development of essential components for terahertz EO modulators.
  • The findings enable nonreciprocal and field-activated birefringence for advanced photonic applications.