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High-Throughput Information Storage in an Intelligent Response Phosphor.

Dangli Gao1, Zhigang Wang1, Xiangyu Zhang2

  • 1College of Science, Xi'an University of Architecture and Technology, Xi'an, Shaanxi 710055, China.

ACS Applied Materials & Interfaces
|January 16, 2025
PubMed
Summary

This study introduces a novel Sm3+-doped persistent phosphor, NaGdGeO4:Pb2+,Tb3+, offering enhanced storage capacity and superstrong thermostimulated luminescence (TSL) for advanced optical data recording applications.

Keywords:
multidimensional information storagepersistent luminescence mechanismpersistent phosphorthermostimulated luminescencetrap structure

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Area of Science:

  • Materials Science
  • Solid-State Chemistry
  • Optoelectronics

Background:

  • Persistent phosphors offer low-energy, accessible information storage.
  • Limited storage capacity hinders practical applications of current persistent phosphors.

Purpose of the Study:

  • To design and develop a novel persistent phosphor with enhanced storage capacity and thermostimulated luminescence (TSL).
  • To investigate the mechanism behind the enhanced TSL.
  • To demonstrate high-throughput, multi-dimensional optical data recording.

Main Methods:

  • Synthesis of NaGdGeO4:Pb2+,Tb3+ phosphor doped with Sm3+.
  • Characterization of material properties, including carrier capacity and TSL intensity.
  • Analysis of the electron-hole defect pair structure to elucidate TSL mechanism.
  • Implementation of a five-dimensional optical data recording system.

Main Results:

  • The developed NaGdGeO4:Pb2+,Tb3+:Sm3+ phosphor exhibits superior carrier capacity compared to commercial phosphors.
  • Achieved superstrong thermostimulated luminescence (TSL) with an efficiency of 17.3%, three times greater than photoluminescence (PL) intensity.
  • Proposed a mechanism for enhanced and controllable TSL based on defect structure.
  • Successfully demonstrated high-throughput five-dimensional optical data recording in a single fluorescent film.

Conclusions:

  • The Sm3+-doped NaGdGeO4:Pb2+,Tb3+ phosphor presents a viable solution for overcoming the storage capacity limitations of persistent phosphors.
  • The findings offer a universal strategy for creating advanced TSL materials.
  • This work establishes a new direction for next-generation optical storage technology.