Ultra-short stripe microlasers fabricated with a focused ion beam etching technique

Fabry-Perot (FP) lasers with a cavity length shorten down to 50 µm were investigated. One or two laser mirrors were formed by focused ion beam etching. InGaAs quantum dots of high density were used as the laser active region. The lasers operate in a pulsed regime up to at least 105°С. A comparison with lasers formed by the facet cleaving method (minimum length is 100 µm) reveals the similarity of the emission wavelength and the threshold current depending on the cavity length. This allows us to conclude that the etched facets do not significantly affect the non-radiative recombination rate and provide a reflection coefficient close to that of the cleaved facet. The maximum modal gain was estimated to be not less than 240 cm^-1. No evidence of the excited-state lasing was found.