Sulfur Vacancies Limit the Open-Circuit Voltage of Sb2S3 Solar Cells
Xinwei Wang1, Seán R Kavanagh2, Aron Walsh1,3
1Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, U.K.
Abstract:
Antimony sulfide (Sb2S3) is a promising candidate as an absorber layer for single-junction solar cells and the top subcell in tandem solar cells. However, the power conversion efficiency of Sb2S3-based solar cells has remained stagnant over the past decade, largely due to trap-assisted nonradiative recombination. Here we assess the trap-limited conversion efficiency of Sb2S3 by investigating nonradiative carrier capture rates for intrinsic point defects using first-principles calculations and Sah-Shockley statistics. Our results show that sulfur vacancies act as effective recombination centers, limiting the maximum light-to-electricity efficiency of Sb2S3 to 16%. The equilibrium concentrations of sulfur vacancies remain relatively high, regardless of growth conditions, indicating the intrinsic limitations imposed by these vacancies on the performance of Sb2S3.
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