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Triazenide based metal precursors for vapour deposition
Nathan J O'Brien1, Henrik Pedersen1
1Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden. nathan.o.brien@liu.se.
Dalton Transactions (Cambridge, England : 2003)
|January 17, 2025
Summary
Metal triazenides, featuring a positively charged metal center and dialkyltrianzenide ligands, exhibit high thermal stability and volatility. These properties make them promising precursors for advanced materials synthesis via chemical vapour deposition and atomic layer deposition.
Area of Science:
- Materials Science
- Inorganic Chemistry
- Nanotechnology
Background:
- 1,3-dialkyltrianzenide ligands coordinate with metal centers in a positive valence.
- These metal triazenides possess notable thermal stability and volatility.
Purpose of the Study:
- To highlight the potential of metal triazenides as precursors for chemical vapour deposition (CVD) and atomic layer deposition (ALD).
- To explore the synthesis of advanced materials using these novel precursors.
Main Methods:
- Synthesis and characterization of metal triazenides.
- Evaluation of thermal stability and volatility.
- Application in CVD and ALD processes.
Main Results:
- Metals from groups 11-14 and lanthanoids form stable triazenides.
- Indium and Gallium triazenides are effective precursors for InN, In2O3, GaN, and InGaN thin films.
- Demonstrated suitability for CVD and ALD applications.
Conclusions:
- Metal triazenides are versatile precursors for thin film deposition.
- Further research into triazenide chemistry for CVD and ALD is warranted.
- These compounds offer a new route for fabricating advanced electronic and optical materials.
