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Bandgap Engineering Based on A-site Ions Tuning in Tin Halide Perovskite
1School of Physics and Electronics, Hunan University Changsha, Hunan, 410082, P. R. China.
Abstract:
Tin-based halide perovskites (ASnX3) have garnered substantial interest due to their unique photoelectric properties and environmentally friendly features. The A-site ions tuning strategy has been proven to promote material performance. However, there is a lack of systematic research on the optical properties, lattice structure variation, and band structure evolution in tin-based perovskites when the A-site ions tune from organic to inorganic. Herein, MA1-xCsxSnBr3 and MA1-xCsxSnI3 (0≤x≤1) flakes are synthesized through a one-pot reaction method. By controlling the Cs ratio, a tunable photoluminescence (PL) emission covering a wide range of 560-685 nm can be observed in MA1-xCsxSnBr3, with bandgap tuned from 1.8 to 2.15 eV, while the PL ranges from 900 to 950 nm with the bandgap 1.2-1.3 eV for MA1-xCsxSnI3. Besides, the PL intensity of MA1-xCsxSnBr3 significantly enhances with the increasing Cs ratio. First-principles calculations reveal that the octahedron shrinks gradually as the Cs ratio increases. It increases the orbital overlap between Sn and Br and causes a symmetry variation, thus decreasing the bandgap and increasing emission intensity. This work reveals the photophysical mechanism of improved optical properties and bandgap variation in tin-based perovskites, paving the way for their future applications.
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