Two-dimensional strain-mapping by electron backscatter diffraction and confocal Raman spectroscopy

The strain field surrounding a spherical indentation in silicon is mapped in two dimensions (2-D) using electron backscatter diffraction (EBSD) cross-correlation and confocal Raman spectroscopy techniques. The 200 mN indentation created a $4\mathrm{micro}\text{m}$ diameter residual contact impression in the silicon (001) surface. Maps about $50\mathrm{micro}\text{m}\times 50\mathrm{micro}\text{m}$ area with 128 pixels × 128 pixels were generated in several hours, extending, by comparison, assessment of the accuracy of both techniques to mapping multiaxial strain states in 2-D. EBSD measurements showed a residual strain field dominated by in-surface normal and shear strains, with alternating tensile and compressive lobes extending about three to four indentation diameters from the contact and exhibiting two-fold symmetry. Raman measurements showed a residual Raman shift field, dominated by positive shifts, also extending about three to four indentation diameters from the contact but exhibiting four-fold symmetry. The 2-D EBSD results, in combination with a mechanical-spectroscopic analysis, were used to successfully predict the 2-D Raman shift map in scale, symmetry, and shift magnitude. Both techniques should be useful in enhancing the reliability of microelectromechanical systems (MEMS) through identification of the 2-D strain fields in MEMS devices.