Related Experiment Video
Updated: Jun 1, 2025

Fabrication and Testing of Photonic Thermometers
Published on: October 24, 2018
Manipulating Fano Coupling in an Opto-Thermoelectric Field
Linhan Lin1, Sergey Lepeshov2, Alex Krasnok3
1State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, 100084, P. R. China.
Abstract:
Fano resonances in photonics arise from the coupling and interference between two resonant modes in structures with broken symmetry. They feature an uneven and narrow and tunable lineshape and are ideally suited for optical spectroscopy. Many Fano resonance structures have been suggested in nanophotonics over the last ten years, but reconfigurability and tailored design remain challenging. Herein, an all-optical "pick-and-place" approach aimed at assembling Fano metamolecules of various geometries and compositions in a reconfigurable manner is proposed. Their coupling behavior by in situ dark-field scattering spectroscopy is studied. Driven by a light-directed opto-thermoelectric field, silicon nanoparticles with high-quality-factor Mie resonances (discrete states) and low-loss BaTiO3 nanoparticles (continuum states) are assembled into all-dielectric heterodimers, where distinct Fano resonances are observed. The Fano parameter can be adjusted by changing the resonant frequency of the discrete states or the light polarization. Tunable coupling strength and multiple Fano resonances by altering the number of continuum states and discrete states in dielectric heterooligomers are also shown. This work offers a general design rule for Fano resonance and an all-optical platform for controlling Fano coupling on demand.
Related Concept Videos
Field Effect Transistor
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Joule-Thomson Effect
This experiment forces high-pressure gas through a throttle valve or a porous plug to a lower-pressure region. The gas expands as it passes through to...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Induced Electric Fields: Applications

