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Updated: May 31, 2025

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
Ferroelectric and Optoelectronic Coupling Effects in Layered Ferroelectric Semiconductor-Based FETs for Visual
Can Zhao1, Zhaotan Gao1, Zian Hong1
1Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China.
Ferroelectric semiconductor field-effect transistors (FeSFETs) demonstrate tunable conductance states for advanced electronics. These devices achieve high on/off ratios and recognize handwritten digits, paving the way for in-memory computing.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Device Engineering
Background:
- Controlling ferroelectric polarization is key to novel optoelectronic properties.
- Ferroelectric semiconductors offer a pathway for advanced electronic devices.
Purpose of the Study:
- To fabricate and characterize ferroelectric semiconductor-based field-effect transistors (FeSFETs) using alpha-indium selenide (α-In2Se3).
- To investigate the impact of ferroelectric polarization on device conductance states and performance.
- To explore the potential of these FeSFETs for neuromorphic computing applications.
Main Methods:
- Fabrication of α-In2Se3-based FeSFETs.
- Electrical characterization including on/off current ratio and dark current measurements.
- Kelvin probe force microscopy (KPFM) and optoelectronic measurements to study carrier transport.
- Training and testing the device on the MNIST handwritten digit dataset.
Main Results:
- Achieved multiple conductance states in α-In2Se3-based FeSFETs by controlling ferroelectric polarization.
- Demonstrated a high on/off current ratio (≈10^5) and low dark current (≈10^-11 A).
- Exhibited excellent device endurance and retention.
- Successfully recognized handwritten digits from the MNIST dataset with ≈95.5% accuracy.
Conclusions:
- Ferroelectric polarization control in α-In2Se3-based FeSFETs enables tunable device characteristics.
- The developed FeSFETs show promise for in-memory sensing and computing applications.
- This work offers a new design paradigm for advanced optoelectronic devices.
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