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Updated: May 31, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Intrinsic Solution to the Dilemma between High-Efficiency and External-Field-Free Spin-Orbit Torque Switching Based
Biao Wu1, Siyuan Jiang1, Di Wang1
1School of Microelectronics, University of Science and Technology of China, Hefei 230026, People's Republic of China.
Abstract:
Spin-orbit torque (SOT) is widely considered to be a fast and robust writing scheme for magnetic random-access memories (MRAMs). However, the requirements of field-free switching and high switching efficiency are often incompatible in SOT devices, placing a critical challenge on its improvement. Here we propose that by utilizing biaxial systems the dilemma between high-efficiency and external-field-free SOT switching can be solved intrinsically. We further demonstrate the feasibility of the proposed writing scheme in a MgO/Fe/W device and show that the intrinsic multistate storage ability of the biaxial device compensates its additional area requirement. These results are expected to pave the way toward the further development of SOT-MRAMs.
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