Highly bright perovskite light-emitting diodes enabled by retarded Auger recombination

Area of Science:

• Materials Science
• Optoelectronics
• Solid-State Physics

Background:

• Perovskite light-emitting diodes (PeLEDs) offer high performance potential at high current densities.
• Current state-of-the-art PeLEDs suffer from efficiency roll-off under high electrical excitation.
• This limits their application in high-power lighting.

Purpose of the Study:

• To develop PeLEDs with high efficiency and negligible roll-off at high current densities.
• To investigate the role of electron-withdrawing anions in improving PeLED performance.
• To enable PeLEDs for high-power light-emitting applications.

Main Methods:

• Incorporation of electron-withdrawing trifluoroacetate anions into 3D perovskite emitters.
• Fabrication and characterization of PeLED devices.
• Analysis of recombination dynamics and charge injection balance.

Main Results:

• Achieved peak radiance of 2409 W sr^-1 m^-2.
• Maintained external quantum efficiency over 20% at current densities up to 2270 mA cm^-2.
• Demonstrated negligible current-efficiency roll-off.
• Retarded Auger recombination via decoupled electron-hole wavefunctions.
• Improved charge injection balance and high-voltage tolerance.

Conclusions:

• Trifluoroacetate anion incorporation is a viable strategy to enhance PeLED performance.
• The developed PeLEDs show promise for high-power light-emitting applications.
• Further research into perovskite emitters for demanding applications is warranted.