Crystallographic Spin Torque Conductivity Tensor of Epitaxial IrO₂ Thin Films for Oxide Spintronics

Unconventional spin-orbit torques arising from electric-field-generated spin currents in anisotropic materials have promising potential for spintronic applications, including for perpendicular magnetic switching in high-density memory applications. Here, all the independent elements of the spin torque conductivity tensor allowed by bulk crystal symmetries for the tetragonal conductor IrO₂ are determined via measurements of conventional (in-plane) anti-damping torques for IrO₂ thin films in the high-symmetry (001) and (100) orientations. It is then tested whether rotational transformations of this same tensor can predict both the conventional and unconventional anti-damping torques for IrO₂ thin films in the lower-symmetry (101), (110), and (111) orientations, finding good agreement. The results confirm that spin-orbit torques from all these orientations are consistent with the bulk symmetries of IrO₂, and show how simple measurements of conventional torques from high-symmetry orientations of anisotropic thin films can provide an accurate prediction of the unconventional torques from lower-symmetry orientations.