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Updated: May 31, 2025
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Optical properties of quasi-two-dimensional GaAs/AlGaAs nanosheets prepared by releasing epitaxial layer
Bowen Zhang1,2,3, Yu Hao1,2, Chao Shi1,2
1Chongqing Research Institute, Changchun University of Science and Technology, No.618 Liangjiang Avenue, Longxing Town, Yubei District, Chongqing City 401135, People's Republic of China.
Abstract:
Quasi-two-dimensional nanosheets exhibit novel properties and promising applications in optoelectronic flexible devices. Research on non-layered III-V semiconductor nanosheets has been constrained by their covalent bonding connections. In this study, GaAs/AlGaAs heterojunction nanosheets were prepared by releasing an epitaxial layer, and their optical properties were investigated by adopting steady-state and transient absorption spectroscopy. The optical properties of the independent GaAs/AlGaAs heterojunction were investigated separately in order to exclude the effect of the substrate. This work provides a comprehensive understanding of the physics of III-V semiconductor quasi-two-dimensional nanosheets.
