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Updated: May 31, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing
Minjong Lee1, Peng Zhou1, Heber Hernandez-Arriaga2
1Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.
Ferroelectric hafnium zirconium oxide (HZO) capacitors offer reliable in-memory computing. Utilizing remanent polarization switching in HZO synapses enhances accuracy for neuromorphic applications.
Area of Science:
- Materials Science
- Electrical Engineering
- Computer Science
Background:
- Ferroelectric hafnium zirconium oxide (HZO) capacitors are explored for in-memory computing (IMC) due to nonvolatility and process compatibility.
- Existing IMC approaches using HZO resistance/capacitance states for vector-matrix multiplication (VMM) face accuracy and reliability challenges.
Purpose of the Study:
- To propose and validate a novel IMC approach using the remanent polarization (Pr) switching of ferroelectric HZO capacitor synapses.
- To enhance accuracy and reliability in neuromorphic IMC applications.
Main Methods:
- Experimental demonstration of a pattern recognition task using Pr switching in HZO capacitor synapses.
- Large-scale simulations of a complex inference task to evaluate performance and robustness.
Main Results:
- Voltage readout of Pr switching demonstrated excellent accuracy and reliability due to a high on/off ratio.
- Simulations achieved high accuracy and immunity to device variations in complex inference tasks.
Conclusions:
- The proposed Pr switching paradigm in ferroelectric HZO capacitor synapses shows significant promise for near-term neuromorphic IMC.
- This approach offers a reliable and accurate method for implementing synaptic functions in advanced computing architectures.
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