Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing

Minjong Lee1, Peng Zhou1, Heber Hernandez-Arriaga2

  • 1Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.

Nano Letters
|January 23, 2025
PubMed
Summary

Ferroelectric hafnium zirconium oxide (HZO) capacitors offer reliable in-memory computing. Utilizing remanent polarization switching in HZO synapses enhances accuracy for neuromorphic applications.

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