Direct observations of nucleation and early-stage growth of Au-catalyzed GaAs nanowires on Si(111)

Developing a reliable procedure for the growth of III-V nanowires (NW) on silicon (Si) substrates remains a significant challenge, as current methods rely on trial-and-error approaches with varying interpretations of critical process steps such as sample preparation, Au-Si alloy formation in the growth reactor, and NW alignment. Addressing these challenges is essential for enabling high-performance electronic and optoelectronic devices that combine the superior properties of III-V NW semiconductors with the well-established Si-based technology. Combining conventional scalable growth methods, such as metalorganic chemical vapor deposition (MOCVD) within situcharacterization using environmental transmission electron microscopy (ETEM-MOCVD) enables a deeper understanding of the growth dynamics, if that knowledge is transferable to the scalable processes. We report on successful epitaxial growth of Au-catalyzed GaAs NWs on Si(111) substrates using micro-electromechanical system chips with monocrystalline Si-cantilevers in both conventional MOCVD and ETEM-MOCVD systems. The conventional MOCVD provided a framework for initial parameter tuning, while ETEM-MOCVD offered valuable insights into early nucleation and catalyst-substrate interactions. Our findings show that nucleation is significantly influenced by the removal of native oxide layers and the initial formation of the Au-Si alloy. Ourin situstudies revealed different NW-substrate interfaces, essential for optimizing the epitaxial growth process. We identified three typical configurations of NW 'roots', each impacted by growth conditions and preparation steps, affecting the structural and potentially the optical properties of the NWs. Similarly, doping from the Si-substrate may affect both optical and electrical properties; however, compositional analysis revealed no traces of Si in NWs post-nucleation and a small amount in the catalytic droplet. Our research highlights the importance ofin situstudies for a comprehensive understanding of nucleation mechanisms, paving the way for optimizing III-V NW growth on Si substrates and developing high-performance III-V/Si devices.