Tunable Filters Using Defected Ground Structures at Millimeter-Wave Frequencies
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Updated: May 31, 2025

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
Published on: February 4, 2018
Kaushik Annam1, Birhanu Alemayehu1, Eunsung Shin1
1Center of Excellence for Thin-Film Research and Surface Engineering (CETRASE), Department of Electrical and Computer Engineering, University of Dayton, Dayton, OH 45469, USA.
Abstract:
This paper explores the potential of phase change materials (PCM) for dynamically tuning the frequency response of a dumbbell u-slot defected ground structure (DGS)-based band stop filter. The DGSs are designed using co-planar waveguide (CPW) line structure on top of a barium strontium titanate (Ba0.6Sr0.4TiO3) (BST) thin film. BST film is used as the high-dielectric material for the planar DGS. Lower insertion loss of less than -2 dB below the lower cutoff frequency, and enhanced band-rejection with notch depth of -39.64 dB at 27.75 GHz is achieved by cascading two-unit cells, compared to -12.26 dB rejection with a single-unit cell using BST thin film only. Further tunability is achieved by using a germanium telluride (GeTe) PCM layer. The electrical properties of PCM can be reversibly altered by transitioning between amorphous and crystalline phases. We demonstrate that incorporating a PCM layer into a DGS device allows for significant tuning of the resonance frequency: a shift in resonance frequency from 30.75 GHz to 33 GHz with a frequency shift of 2.25 GHz is achieved, i.e., 7.32% tuning is shown with a single DGS cell. Furthermore, by cascading two DGS cells with PCM, an even wider tuning range is achievable: a shift in resonance frequency from 27 GHz to 30.25 GHz with a frequency shift of 3.25 GHz is achieved, i.e., 12.04% tuning is shown by cascading two DGS cells. The results are validated through simulations and measurements, showcasing excellent agreement.
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