Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect

Area of Science:

• Materials Science
• Optoelectronics
• Semiconductor Devices

Background:

• Indium gallium nitride (InGaN) micro-light-emitting diodes (micro-LEDs) are crucial for emerging applications like augmented reality (AR) and virtual reality (VR) micro-displays.
• Conventional plasma etching for pixel definition in micro-LED fabrication causes significant mesa sidewall damage.
• This damage leads to a severe efficiency reduction as micro-LED dimensions decrease, hindering their development and application.

Purpose of the Study:

• To comprehensively explain the origin and physical models of micro-LED sidewall effects.
• To systematically review recent advancements in micro-LED fabrication techniques aimed at mitigating sidewall damage.
• To discuss the potential of "damage-free" fabrication methods for high-efficiency InGaN micro-LEDs.

Main Methods:

• Review of physical models explaining sidewall damage mechanisms in InGaN micro-LEDs.
• Systematic literature review of micro-LED fabrication techniques.
• Analysis of "damage-free" fabrication approaches and their impact on device efficiency.

Main Results:

• Detailed explanation of the physical origins of sidewall effects in micro-LEDs.
• Identification of fabrication strategies to suppress plasma-induced damage.
• Highlighting of damage-free techniques as a promising solution for efficient micro-LEDs.

Conclusions:

• Understanding sidewall effects is critical for advancing micro-LED technology.
• Damage-free fabrication techniques offer a pathway to overcome efficiency limitations in small-scale InGaN micro-LEDs.
• This review provides insights into fabrication technologies for high-performance micro-LEDs.