Related Experiment Video

Updated: May 30, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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Flat Band Generation Through Interlayer Geometric Frustration in Intercalated Transition Metal Dichalcogenides

Yawen Peng1, Ren He1, Peng Li1

  • 1Institute for Quantum Computing and Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, N2L3G1, Canada.

Small (Weinheim an Der Bergstrasse, Germany)
|January 27, 2025
PubMed

Keywords:
ARPESDFT calculationsflat‐bandstight‐binding modeltransition metal dichalcogenide

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