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Updated: May 30, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
1School of Physics, Xidian University, No. 2 Taibai South Road, Xi'an 710071, China.
Synthesizing true hexagonal boron nitride (h-BN) nanodots faces challenges due to mischaracterizations in current methods. Strict conditions and re-evaluation of properties are crucial for authentic BN nanodot production.
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