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Related Concept Videos

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Updated: May 30, 2025

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Atomic-scale Control of Tunneling in Donor-based Devices.

Xiqiao Wang1,2,3, Jonathan Wyrick1, Ranjit V Kashid1

  • 1National Institute of Standards and Technology, 100 Bureau Dr., Gaithersburg, Maryland 20899, USA.

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|January 28, 2025
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Summary

Researchers achieved atomic-scale control over tunneling rates in donor-based quantum devices. This breakthrough in fabrication paves the way for advanced solid-state quantum computing and simulations.

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Area of Science:

  • Quantum computing
  • Solid-state physics
  • Materials science

Background:

  • Atomically precise donor-based quantum devices offer potential for quantum computing and simulations.
  • Challenges in fabrication have hindered atomic-scale control of tunneling rates and coupling.

Purpose of the Study:

  • To demonstrate systematic, atomic-scale control over tunneling rates in quantum devices.
  • To establish a reproducible fabrication process for precision-patterned single electron transistors.

Main Methods:

  • Utilized a room-temperature grown locking layer and precise fabrication control.
  • Employed scanning tunneling microscopy (STM) for atomic-scale patterning.
  • Used Si(100)2×1 surface reconstruction as a ruler to characterize the tunnel gap.

Main Results:

  • Achieved high-quality epitaxy and reduced unintentional dopant movement.
  • Demonstrated exponential scaling of tunneling resistance with tunnel gap size (7-16 dimer rows).
  • Showcased reproducible device patterning with atomic precision.

Conclusions:

  • Established a donor-based fabrication process with atomic precision.
  • Confirmed that atomic-scale changes in the tunnel gap predictably alter tunneling rates.
  • Advanced the development of atomically precise quantum devices for future applications.