Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

288
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
288
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.1K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.1K
Electric Field of Two Equal and Opposite Charges01:30

Electric Field of Two Equal and Opposite Charges

5.8K
Atoms generally contain the same number of positively and negatively charged particles, protons, and electrons. Hence, they are electrically neutral. However, the centers of the positive and negative charges do not always coincide. In such a scenario, the electric field of an atom may not be zero.
A separation of the positive and negative charges can lead to a weak, remnant effect of the positive and negative charges. The expectation is that the more the distance between the positive and...
5.8K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

281
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
281
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

4.6K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
4.6K
Hybridization of Atomic Orbitals I03:24

Hybridization of Atomic Orbitals I

46.4K
The mathematical expression known as the wave function, ψ, contains information about each orbital and the wavelike properties of electrons in an isolated atom. When atoms are bound together in a molecule, the wave functions combine to produce new mathematical descriptions that have different shapes. This process of combining the wave functions for atomic orbitals is called hybridization and is mathematically accomplished by the linear combination of atomic orbitals. The new orbitals that...
46.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Probing Moiré Excitons in MoSe<sub>2</sub>/WSe<sub>2</sub> Heterobilayers by Combined Micro-photoluminescence and Lateral Force Microscopy.

Nano letters·2026
Same author

The impact of COVID-19 social isolation and reduced microbial exposure on the immune system in children: a retrospective study.

PeerJ·2026
Same author

Cavity control of multiferroic order in single-layer NiI<sub>2</sub>.

npj computational materials·2026
Same author

DsbA-L safeguards T cell mitochondrial redox homeostasis to restrain Th17 differentiation and colitis.

Cell death & disease·2026
Same author

Questionnaire on efficacy of the competency-oriented integrated residency and fellowship training for ophthalmologists in Shanghai.

Frontiers in medicine·2026
Same author

Prognostic evaluation of retinal reattachment surgery: predictive efficacy analysis of microperfusion indices via contrast-enhanced ultrasound.

Scientific reports·2026

Related Experiment Video

Updated: May 30, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.3K

Valley charge-transfer insulator in twisted double bilayer WSe2.

LingNan Wei1, Qingxin Li1, Majeed Ur Rehman2

  • 1National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing, China.

Nature Communications
|January 30, 2025
PubMed
Summary

Researchers created a tunable platform using twisted double bilayer WSe2 to control correlated electronic phases. They demonstrated a transition from Mott-Hubbard to charge-transfer insulators by tuning valley bands, highlighting valley degree of freedom for exotic phase control.

More Related Videos

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
11:21

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Published on: March 21, 2018

8.1K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.4K

Related Experiment Videos

Last Updated: May 30, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.3K
Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
11:21

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Published on: March 21, 2018

8.1K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.4K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Materials

Background:

  • Emergent physics in flat-band systems is sensitive to nearby electronic bands.
  • Mott-Hubbard insulators can transform into charge-transfer insulators with additional electronic states.

Purpose of the Study:

  • To introduce twisted double bilayer (TDB) WSe2 as a controllable platform for exploring correlated electronic phases.
  • To investigate the interplay between K-valley and Γ-valley bands in TDB WSe2.
  • To demonstrate the tunability of correlated insulating phases via gate control.

Main Methods:

  • Fabrication of twisted double bilayer (TDB) WSe2 heterostructures.
  • Utilizing twist angles near 60° to bring K-valley and Γ-valley bands into proximity.
  • Employing gate voltage to tune the relative energy positions of the K-valley and Γ-valley bands.
  • Investigating electronic properties at half-filling to observe Mott-Hubbard and charge-transfer insulating behaviors.

Main Results:

  • Correlations split the Γ-valley flat band into upper and lower Hubbard bands.
  • A charge-transfer insulator phase was observed between the Γ-valley upper Hubbard band and the K-valley band.
  • Gate control allowed continuous tuning of the charge-transfer insulator gap.
  • A continuous phase transition from a charge-transfer insulator to a metallic state was achieved.

Conclusions:

  • The valley degree of freedom serves as an effective control knob for transitions between exotic correlated phases.
  • TDB WSe2 provides a versatile platform for studying and manipulating correlated electron phenomena.
  • This work offers new pathways for designing and realizing novel quantum states of matter.