Multi-Functional Interface Engineering for Monolithic Perovskite/Perovskite/Crystalline Silicon Triple-Junction

Yufei Shao1,2, Shulin Wang2, Tian Luo2

  • 1Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Chemistry & Chemical Engineering, Shaanxi Normal University, Xi'an, Shaanxi, 710119, China.

Chemsuschem
|February 1, 2025
PubMed
Summary

Piperazinium bromide enhances wide-bandgap perovskite films for efficient solar cells. This interface engineering boosts performance in single-junction perovskite solar cells and triple-junction tandem solar cells, achieving higher efficiencies.

Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
454
Interfacial Electrochemical Methods: Overview01:06

Interfacial Electrochemical Methods: Overview

Interfacial electrochemical methods focus on the phenomena occurring at the boundary between an electrode and a solution, as opposed to bulk methods that concentrate on the solution's overall properties. These interfacial methods are classified as either static or dynamic based on the presence of a nonzero current in the electrochemical cell and the consistency of analyte concentrations. Static methods, such as potentiometry, measure the cell's potential without any significant current...
216
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
281