Al and Zn Doping in InON Thin Films and Their Optical, Electrical, and Electrochromic Properties

Indium oxynitride (InON) is a promising material for various applications due to its notable properties, including high mobility, stability, and visible light transparency. Despite its potential, research on InON's electrochromic (EC) properties, especially after doping, remains limited. This study employed DC magnetron sputtering to prepare InON films under various doping conditions. A comprehensive investigation was conducted to examine the impacts of aluminum (Al) and zinc (Zn) doping on the composition, structure, morphology, optical, electrical, and EC characteristics of the InON films. The results indicated that Al doping increased surface amino groups, roughness, and optical band gap while enhancing redox activity. Zn doping introduced ZnO crystalline peaks, smoothed the surface, and reduced the optical bandgap and electrochemical performance. Both doping types negatively affected optical modulation but enabled the tuning of EC response peaks and wavelength ranges. This research underscores the significant role of doping in optimizing the EC performance of InON films, highlighting their potential for advanced applications.