Highly Stable Electronics Based on β-Ga₂O₃ for Advanced Memory Applications.

Area of Science:

• Materials Science and Engineering
• Semiconductor Physics
• Device Fabrication

Background:

• Wide-bandgap (WBG) semiconductors are crucial for advancing electronic technology and enabling new device functionalities.
• While β-Ga₂O₃ shows promise, its application in high-temperature, high-speed volatile memory for harsh environments remains underexplored.

Purpose of the Study:

• To fabricate and characterize a high-performance hexagonal boron nitride (h-BN)/β-Ga₂O₃ heterostructure junction field-effect transistor (HJFET).
• To evaluate the thermal reliability and environmental stability of the fabricated HJFET for harsh environment applications.
• To demonstrate the potential of the HJFET in accelerator-in-memory computing, including dynamic random-access memory and neural network computations.

Main Methods:

• Fabrication of a h-BN/β-Ga₂O₃ heterostructure junction field-effect transistor (HJFET).
• Electrical characterization of the HJFET, including off-state current, on/off current ratio, contact resistance, and field-effect electron mobility.
• Testing of thermal reliability across an ultra-wide temperature range (223–573 K) and assessment of long-term environmental stability in air.
• Demonstration of application in accelerator-in-memory computing architectures.

Main Results:

• The HJFET achieved an ultra-low off-state current (≈10 fA) and a high on/off current ratio (≈10⁸).
• Excellent device performance was observed, including low contact resistance (5.6 Ω·mm) and high field-effect electron mobility (156 cm²(Vs)⁻¹).
• The device exhibited outstanding thermal reliability from 223 K to 573 K and long-term stability in air, confirming its suitability for harsh environments.
• Successful implementation in dynamic random-access memory structures and neural network computations was demonstrated.

Conclusions:

• The fabricated h-BN/β-Ga₂O₃ HJFET demonstrates superior performance and reliability for operation in extreme environments.
• This β-Ga₂O₃-based device holds significant promise for applications in demanding sectors like automotive, aerospace, and sensor technology.
• The findings open new possibilities for advanced electronic devices operating under harsh conditions, contributing to the continued advancement of semiconductor technology.