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Updated: May 29, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Stability and Mobility of Disconnections in Solute Atmospheres: Insights from Interfacial Defect Diagrams
Chongze Hu1, Douglas L Medlin2, Rémi Dingreville3
1The University of Alabama, Department of Aerospace Engineering and Mechanics, Tuscaloosa, Alabama 35401, USA.
Abstract:
This Letter explores the stability of disconnections (step-dislocation defects) at grain boundaries in binary alloys. We introduce interfacial defect diagrams, derived from atomistic simulations and segregation theory, to predict the stability of disconnections in the temperature-solute concentration phase space and relate it to governing segregation mechanisms. These diagrams reveal multiple stability regimes influenced by solute-induced clustering and pinning effects impacting the thermal migration of disconnections and offering insights into their thermodynamics and kinetic properties.
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